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STB200N6F3, STI200N6F3 STP200N6F3 www..com N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAK STripFETTM Power MOSFET Preliminary data Features Type STB200N6F3 STI200N6F3 STP200N6F3 VDSS 60 V 60 V 60 V RDS(on) < 3.6 m < 3.9 m < 3.9 m ID 120 A (1) (1) Pw 330 W 330 W 3 1 2 120 A 120 A(1) 330 W TO-220 3 1 3 12 1. Value limited by wire bonding D2PAK I2PAK Ultra low on-resistance 100% avalanche tested Application Switching applications Figure 1. Internal schematic diagram Description This STripFETTM III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Table 1. Device summary Marking 200N6F3 200N6F3 200N6F3 Package D2PAK I 2PAK Order codes STB200N6F3 STI200N6F3 STP200N6F3 Packaging Tape & reel Tube Tube TO-220 April 2009 Doc ID 15606 Rev 1 1/13 www.st.com 13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB200N6F3, STI200N6F3, STP200N6F3 Contents 1 www..com 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 15606 Rev 1 STB200N6F3, STI200N6F3, STP200N6F3 Electrical ratings 1 www..com Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 60 20 120 120 480 330 2.2 TBD TBD -55 To 175 Unit V V A A A W W/C V/ns mJ C ID (1) IDM (2) PTOT dv/dt (3) EAS (4) Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature storage temperature Tj Tstg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. ISD 120 A, di/dt TBD, VDD V(BR)DSS, TJ TJMAX 4. Starting Tj = 25 C, ID = TBD, VDD = TBD (see Figure 5 and Figure 6) Table 3. Symbol Rthj-case Rthj-a Rthj-pcb(1) Tl Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 300 62.5 50 TO-220/IPAK 0.45 DPAK Unit C/W C/W C/W C 1. When mounted on 1 inch FR4 2oz Cu. Doc ID 15606 Rev 1 3/13 Electrical characteristics STB200N6F3, STI200N6F3, STP200N6F3 2 www..com Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 250 A, VGS= 0 VDS= max rating, VDS= max rating,@125C Min. 60 10 100 200 Typ. Max. Unit V A A nA V m m Gate body leakage current VGS = 20 V (VDS = 0) Gate threshold voltage Static drain-source on resistance VDS= VGS, ID = 250 A VGS= 10 V, ID= 60 A DPAK TO-220, IPAK 2 3 3.3 4 3.6 3.9 Table 5. Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 6800 1450 15 TBD TBD TBD TBD 100 30 26 Max. Unit pF pF pF ns ns ns ns nC nC nC VDS = 25 V, f = 1MHz, VGS = 0 - - VDD = 27.5 V, ID = 60 A RG = 4.7 VGS = 10 V (see Figure 2, Figure 7) VDD = 30 V, ID = 120 A, VGS = 10 V, (see Figure 3) - - - - 4/13 Doc ID 15606 Rev 1 STB200N6F3, STI200N6F3, STP200N6F3 Electrical characteristics Table 6. Symbol www..com Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, VGS=0 ISD=120 A, di/dt = 100 A/s, VDD=35 V, Tj=150 C (see Figure 4) Test conditions Min. Typ. Max. 120 480 1.5 TBD TBD TBD Unit A A V ns C A ISD ISDM(1) VSD(2) trr Qrr IRRM - - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% Doc ID 15606 Rev 1 5/13 Test circuits STB200N6F3, STI200N6F3, STP200N6F3 3 www..com Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit Figure 2. Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 6/13 Doc ID 15606 Rev 1 STB200N6F3, STI200N6F3, STP200N6F3 Package mechanical data 4 www..com Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15606 Rev 1 7/13 Package mechanical data STB200N6F3, STI200N6F3, STP200N6F3 D2PAK mechanical data TO-247 MECHANICAL DATA www..com mm. DIM. Min. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0 .4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 Typ. Max. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 Min. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 Typ. Max. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 8/13 Doc ID 15606 Rev 1 STB200N6F3, STI200N6F3, STP200N6F3 Package mechanical data TO-262 (I2PAK) mechanical data www..com DIM. Min. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ. Max. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 mm. inch Doc ID 15606 Rev 1 9/13 Package mechanical data STB200N6F3, STI200N6F3, STP200N6F3 www..com TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 10/13 Doc ID 15606 Rev 1 STB200N6F3, STI200N6F3, STP200N6F3 Packaging mechanical data 5 www..com Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type Doc ID 15606 Rev 1 11/13 Revision history STB200N6F3, STI200N6F3, STP200N6F3 6 www..com Revision history Table 7. Date 20-Apr-2009 Document revision history Revision 1 First version Changes 12/13 Doc ID 15606 Rev 1 STB200N6F3, STI200N6F3, STP200N6F3 www..com Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15606 Rev 1 13/13 |
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